| PART |
Description |
Maker |
| MT55L64L32P1 MT55L128L18P |
64K x 32,3.3V I/O, ZBT SRAM( 2Mb,3.3V输入/输出，静态RAM)
128K x 18, 3.3V I/O, ZBT SRAM(2Mb,3.3V输入/输出，静态RAM) 128K的18.3V的I / O的ZBT SRAM的（处理器，3.3V的输输出，静态内存）
|
Micron Technology, Inc.
|
| MT58L64L32P MT58L64L36P |
(MT58LxxxxP) 2Mb SRAM
|
Micron Semiconductor
|
| M48Z2M1V-701 M48Z2M1V-70G M48Z2M1Y-701 M48Z2M1Y-70 |
5V or 3.3V, 16 Mbit (2Mb x 8) ZEROPOWER SRAM
|
STMicroelectronics
|
| GS820E32AT GS820E32AT-180 GS820E32AT-180I GS820E32 |
64K x 32 2Mb Synchronous Burst SRAM
|
GSI[GSI Technology]
|
| N02L163WN1AT2-55I N02L163WN1A N02L163WN1AB N02L163 |
2Mb Ultra-Low Power Asynchronous CMOS SRAM
|
etc
NANOAMP[NanoAmp Solutions, Inc.]
Electronic Theatre Controls, Inc.
|
| N02L83W2AT5I N02L83W2AT5IT N02L83W2AN25I N02L83W2A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K ? 8 bit
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 8 bit
|
ON Semiconductor
|
| N02L6181A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
|
ON Semiconductor
|
| N02M0818L2 N02M0818L2A N02M0818L2AN-85I N02M0818L2 |
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| HY62U8200B HY62U8200B-E HY62U8200B-I A0A17 |
Low Power Slow SRAM - 2Mb
256Kx8bit CMOS SRAM
256K x8 bit 3.0V Low Power CMOS slow SRAM
|
Hynix Semiconductor
|
| CY7C1515AV18-200BZXI CY7C1526AV18-278BZXC CY7C1526 |
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 QDR SRAM, 0.45 ns, PBGA165
8M X 9 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
